Обзор продукта
- Номер продукта
- NE85619-T1-A
- ПРОИЗВОДИТЕЛЬ
- CEL (California Eastern Laboratories)
- Каталог
- Transistors - Bipolar (BJT) - RF
- ОПИСАНИЕ продукта
- SAME AS 2SC5006 NPN SILICON AMPL
Документы и СМИ
- Диаши
- NE85619-T1-A
информация о продукте
- Current - Collector (Ic) (Max) :
- 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 7mA, 3V
- Frequency - Transition :
- 4.5GHz
- Gain :
- 9dB
- Mounting Type :
- Surface Mount
- Noise Figure (dB Typ @ f) :
- 1.2dB @ 1GHz
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- SOT-523
- Part Status :
- Last Time Buy
- Power - Max :
- 125mW
- Supplier Device Package :
- SOT-523
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 12V
ОПИСАНИЕ продукта
SAME AS 2SC5006 NPN SILICON AMPL
