Обзор продукта
- Номер продукта
- NE85639-T1-A
- ПРОИЗВОДИТЕЛЬ
- CEL (California Eastern Laboratories)
- Каталог
- Transistors - Bipolar (BJT) - RF
- ОПИСАНИЕ продукта
- SAME AS 2SC4093 NPN SILICON AMPL
Документы и СМИ
- Диаши
- NE85639-T1-A
информация о продукте
- Current - Collector (Ic) (Max) :
- 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 20mA, 10V
- Frequency - Transition :
- 7GHz
- Gain :
- 13dB
- Mounting Type :
- Surface Mount
- Noise Figure (dB Typ @ f) :
- 1.1dB @ 1GHz
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- TO-253-4, TO-253AA
- Part Status :
- Last Time Buy
- Power - Max :
- 200mW
- Supplier Device Package :
- SOT-143
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 12V
ОПИСАНИЕ продукта
SAME AS 2SC4093 NPN SILICON AMPL
Рекомендуемые продукты
Вы можете искать
RBM24DTMD-S664
NP1800SBMCT3G
P1504UCRP
RCC24DRSD-S273
ECJ-2FC2D151J
GBC65DRSD-S273
P0641SC
SFSD-05-30-G-04.00-DR-NUX
C1005X7R1H681M050BA
SFSD-05-28-H-03.94-D-NDS
SFSD-20-28-G-99.00-S
160R07Y104ZV4T
GMM40DTBD-S664
TVB140RSC-L
12105A272KAT2A
SFSD-05-28-H-39.37-D-NUS
RBM18DTMD-S664
P1804UCRP
RCC25DRSD-S273
ECJ-2FC2D221J