Обзор продукта
- Номер продукта
- NE662M04-T2-A
- ПРОИЗВОДИТЕЛЬ
- CEL (California Eastern Laboratories)
- Каталог
- Transistors - Bipolar (BJT) - RF
- ОПИСАНИЕ продукта
- SAME AS 2SC5508 NPN SILICON AMPL
Документы и СМИ
- Диаши
- NE662M04-T2-A
информация о продукте
- Current - Collector (Ic) (Max) :
- 35mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 5mA, 2V
- Frequency - Transition :
- 25GHz
- Gain :
- 17dB
- Mounting Type :
- Surface Mount
- Noise Figure (dB Typ @ f) :
- 1.1dB @ 2GHz
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- SOT-343F
- Part Status :
- Last Time Buy
- Power - Max :
- 115mW
- Supplier Device Package :
- M04
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 3.3V
ОПИСАНИЕ продукта
SAME AS 2SC5508 NPN SILICON AMPL
