Диаши

CCS020M12CM2

Current - Continuous Drain (Id) @ 25°C :

29.5A (Tc)

Drain to Source Voltage (Vdss) :

1200V (1.2kV)

FET Feature :

Silicon Carbide (SiC)

FET Type :

6 N-Channel (3-Phase Bridge)

Gate Charge (Qg) (Max) @ Vgs :

61.5nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 800V

Mounting Type :

Chassis Mount

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

Module

Part Status :

Not For New Designs

Power - Max :

167W

Rds On (Max) @ Id, Vgs :

98mOhm @ 20A, 20V

Supplier Device Package :

Module

Vgs(th) (Max) @ Id :

2.2V @ 1mA (Typ)