Обзор продукта
- Номер продукта
- DMN2011UFX-7
- ПРОИЗВОДИТЕЛЬ
- Diodes Incorporated
- ОПИСАНИЕ продукта
- MOSFET 2N-CH 20V 12.2A DFN2050-4
Документы и СМИ
- Диаши
- DMN2011UFX-7
информация о продукте
- Current - Continuous Drain (Id) @ 25°C :
- 12.2A (Ta)
- Drain to Source Voltage (Vdss) :
- 20V
- FET Feature :
- Standard
- FET Type :
- 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs :
- 56nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2248pF @ 10V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 4-VFDFN Exposed Pad
- Part Status :
- Active
- Power - Max :
- 2.1W
- Rds On (Max) @ Id, Vgs :
- 9.5mOhm @ 10A, 4.5V
- Supplier Device Package :
- V-DFN2050-4
- Vgs(th) (Max) @ Id :
- 1V @ 250µA
ОПИСАНИЕ продукта
MOSFET 2N-CH 20V 12.2A DFN2050-4
Рекомендуемые продукты
Вы можете искать
RN73H2BTTD2552C10
MP6-1V-1V-1V-00
RN73H2BTTD1400C10
2-2151259-2
RLP0323700FB00
1530442-1
RWR81N4640FSBSL
VS3-B0-B0-H233-03-CE
2-2151644-1
CPR15300R0JE10
IMP4-3G0-1G0-00-A
RN73H2ETTD1723B50
RN73H2BTTD3521C10
MP6-3D-4LE-00
RN73H2BTTD1490C10
2-2151783-2
RLP0320000FB00
1530443-1
RWR81N4530FSRSL
2-2151554-1