Диаши

SIZ342ADT-T1-GE3

Current - Continuous Drain (Id) @ 25°C :

15.7A (Ta), 33.4A (Tc)

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Standard

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

12.2nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

580pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-PowerWDFN

Part Status :

Active

Power - Max :

3.7W (Ta), 16.7W (Tc)

Rds On (Max) @ Id, Vgs :

9.4mOhm @ 10A, 10V

Supplier Device Package :

8-Power33 (3x3)

Vgs(th) (Max) @ Id :

2.4V @ 250µA