Диаши

QS8J4TR

Current - Continuous Drain (Id) @ 25°C :

4A

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Logic Level Gate

FET Type :

2 P-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

8-SMD, Flat Lead

Part Status :

Active

Power - Max :

550mW

Rds On (Max) @ Id, Vgs :

56mOhm @ 4A, 10V

Supplier Device Package :

TSMT8

Vgs(th) (Max) @ Id :

2.5V @ 1mA