Диаши

NTHD4502NT1G

Current - Continuous Drain (Id) @ 25°C :

2.2A

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

140pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-SMD, Flat Lead

Part Status :

Active

Power - Max :

640mW

Rds On (Max) @ Id, Vgs :

85mOhm @ 2.9A, 10V

Supplier Device Package :

ChipFET™

Vgs(th) (Max) @ Id :

3V @ 250µA