Диаши

EPC2107

Current - Continuous Drain (Id) @ 25°C :

1.7A, 500mA

Drain to Source Voltage (Vdss) :

100V

FET Feature :

GaNFET (Gallium Nitride)

FET Type :

3 N-Channel (Half Bridge + Synchronous Bootstrap)

Gate Charge (Qg) (Max) @ Vgs :

0.16nC @ 5V, 0.044nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

16pF @ 50V, 7pF @ 50V

Mounting Type :

Surface Mount

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

9-VFBGA

Part Status :

Active

Power - Max :

-

Rds On (Max) @ Id, Vgs :

320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V

Supplier Device Package :

9-BGA (1.35x1.35)

Vgs(th) (Max) @ Id :

2.5V @ 100µA, 2.5V @ 20µA