Диаши

EPC2100ENGRT

Current - Continuous Drain (Id) @ 25°C :

10A (Ta), 40A (Ta)

Drain to Source Voltage (Vdss) :

30V

FET Feature :

GaNFET (Gallium Nitride)

FET Type :

2 N-Channel (Half Bridge)

Gate Charge (Qg) (Max) @ Vgs :

4.9nC @ 15V, 19nC @ 15V

Input Capacitance (Ciss) (Max) @ Vds :

475pF @ 15V, 1960pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

Die

Part Status :

Active

Power - Max :

-

Rds On (Max) @ Id, Vgs :

8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V

Supplier Device Package :

Die

Vgs(th) (Max) @ Id :

2.5V @ 4mA, 2.5V @ 16mA