Диаши

RJM0306JSP-01#J0

Current - Continuous Drain (Id) @ 25°C :

3.5A

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Logic Level Gate, 4V Drive

FET Type :

2 N and 2 P-Channel (H-Bridge)

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

-

Part Status :

Active

Power - Max :

2.2W

Rds On (Max) @ Id, Vgs :

65mOhm @ 2A, 10V

Supplier Device Package :

8-SOP

Vgs(th) (Max) @ Id :

-