Диаши

MSCMC120AM02CT6LIAG

Current - Continuous Drain (Id) @ 25°C :

742A (Tc)

Drain to Source Voltage (Vdss) :

1200V (1.2kV)

FET Feature :

Silicon Carbide (SiC)

FET Type :

2 N Channel (Phase Leg)

Gate Charge (Qg) (Max) @ Vgs :

1932nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds :

33500pF @ 1000V

Mounting Type :

Chassis Mount

Operating Temperature :

-40°C ~ 175°C (TJ)

Package / Case :

Module

Part Status :

Active

Power - Max :

3200W (Tc)

Rds On (Max) @ Id, Vgs :

2.85mOhm @ 600A, 20V

Supplier Device Package :

SP6C LI

Vgs(th) (Max) @ Id :

4V @ 180mA