Диаши

TPH3205WSBQA

Current - Continuous Drain (Id) @ 25°C :

35A (Tc)

Drain to Source Voltage (Vdss) :

650 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

42 nC @ 8 V

Input Capacitance (Ciss) (Max) @ Vds :

2200 pF @ 400 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-247-3

Part Status :

Not For New Designs

Power Dissipation (Max) :

125W (Tc)

Rds On (Max) @ Id, Vgs :

62mOhm @ 22A, 8V

Supplier Device Package :

TO-247-3

Technology :

GaNFET (Gallium Nitride)

Vgs (Max) :

±18V

Vgs(th) (Max) @ Id :

2.6V @ 700µA