Диаши

TP90H050WS

Current - Continuous Drain (Id) @ 25°C :

34A (Tc)

Drain to Source Voltage (Vdss) :

900 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

17.5 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

980 pF @ 600 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C

Package / Case :

TO-247-3

Part Status :

Active

Power Dissipation (Max) :

119W (Tc)

Rds On (Max) @ Id, Vgs :

63mOhm @ 22A, 10V

Supplier Device Package :

TO-247-3

Technology :

GaNFET (Cascode Gallium Nitride FET)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4.4V @ 700µA