Диаши

STFI24NM60N

Current - Continuous Drain (Id) @ 25°C :

17A (Tc)

Drain to Source Voltage (Vdss) :

600 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

46 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

1400 pF @ 50 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-262-3 Full Pack, I²Pak

Part Status :

Obsolete

Power Dissipation (Max) :

30W (Tc)

Rds On (Max) @ Id, Vgs :

190mOhm @ 8A, 10V

Supplier Device Package :

I2PAKFP (TO-281)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4V @ 250µA