Диаши

TPH3212PS

Current - Continuous Drain (Id) @ 25°C :

27A (Tc)

Drain to Source Voltage (Vdss) :

650 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

14 nC @ 8 V

Input Capacitance (Ciss) (Max) @ Vds :

1130 pF @ 400 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-220-3

Part Status :

Obsolete

Power Dissipation (Max) :

104W (Tc)

Rds On (Max) @ Id, Vgs :

72mOhm @ 17A, 8V

Supplier Device Package :

TO-220AB

Technology :

GaNFET (Cascode Gallium Nitride FET)

Vgs (Max) :

±18V

Vgs(th) (Max) @ Id :

2.6V @ 400uA