Диаши

HTNFET-T

Current - Continuous Drain (Id) @ 25°C :

-

Drain to Source Voltage (Vdss) :

55 V

Drive Voltage (Max Rds On, Min Rds On) :

5V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

4.3 nC @ 5 V

Input Capacitance (Ciss) (Max) @ Vds :

290 pF @ 28 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 225°C (TJ)

Package / Case :

4-SIP

Part Status :

Active

Power Dissipation (Max) :

50W (Tj)

Rds On (Max) @ Id, Vgs :

400mOhm @ 100mA, 5V

Supplier Device Package :

4-Power Tab

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

10V

Vgs(th) (Max) @ Id :

2.4V @ 100µA