Обзор продукта
Документы и СМИ
- Диаши
- TP65H070LDG
информация о продукте
- Current - Continuous Drain (Id) @ 25°C :
- 25A (Tc)
- Drain to Source Voltage (Vdss) :
- 650 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 9.3 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 600 pF @ 400 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 3-PowerDFN
- Part Status :
- Active
- Power Dissipation (Max) :
- 96W (Tc)
- Rds On (Max) @ Id, Vgs :
- 85mOhm @ 16A, 10V
- Supplier Device Package :
- 3-PQFN (8x8)
- Technology :
- GaNFET (Cascode Gallium Nitride FET)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4.8V @ 700µA
ОПИСАНИЕ продукта
GANFET N-CH 650V 25A 3PQFN
