Диаши

BUK9M3R3-40HX

Current - Continuous Drain (Id) @ 25°C :

80A (Ta)

Drain to Source Voltage (Vdss) :

40 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

55 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

3766 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

SOT-1210, 8-LFPAK33 (5-Lead)

Part Status :

Active

Power Dissipation (Max) :

101W (Ta)

Rds On (Max) @ Id, Vgs :

3.3mOhm @ 25A, 10V

Supplier Device Package :

LFPAK33

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±16V

Vgs(th) (Max) @ Id :

2.15V @ 1mA