Диаши

IRF710R

Current - Continuous Drain (Id) @ 25°C :

2A (Tc)

Drain to Source Voltage (Vdss) :

400 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

12 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

135 pF @ 25 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-220-3

Part Status :

Active

Power Dissipation (Max) :

36W (Tc)

Rds On (Max) @ Id, Vgs :

3.6Ohm @ 1.1A, 10V

Supplier Device Package :

TO-220-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA