Диаши

IRF7468TRPBF

Current - Continuous Drain (Id) @ 25°C :

9.4A (Ta)

Drain to Source Voltage (Vdss) :

40 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

34 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

2460 pF @ 20 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Part Status :

Active

Power Dissipation (Max) :

2.5W (Ta)

Rds On (Max) @ Id, Vgs :

15.5mOhm @ 9.4A, 10V

Supplier Device Package :

8-SO

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±12V

Vgs(th) (Max) @ Id :

2V @ 250µA