Диаши

DMT6012LFDF-7

Current - Continuous Drain (Id) @ 25°C :

9.5A (Ta)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

13.6 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

785 pF @ 30 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

6-UDFN Exposed Pad

Part Status :

Active

Power Dissipation (Max) :

900mW (Ta), 11W (Tc)

Rds On (Max) @ Id, Vgs :

14mOhm @ 8.5A, 10V

Supplier Device Package :

U-DFN2020-6 (Type F)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.3V @ 250µA