Диаши

SIS472BDN-T1-GE3

Current - Continuous Drain (Id) @ 25°C :

15.3A (Ta), 38.3A (Tc)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

21.5 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

1000 pF @ 15 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

PowerPAK® 1212-8

Part Status :

Active

Power Dissipation (Max) :

3.2W (Ta), 19.8W (Tc)

Rds On (Max) @ Id, Vgs :

7.5mOhm @ 10A, 10V

Supplier Device Package :

PowerPAK® 1212-8

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

+20V, -16V

Vgs(th) (Max) @ Id :

2.4V @ 250µA