Диаши

DMN61D9UWQ-7

Current - Continuous Drain (Id) @ 25°C :

400mA (Ta)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

1.8V, 5V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

0.4 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

28.5 pF @ 30 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SC-70, SOT-323

Part Status :

Active

Power Dissipation (Max) :

440mW (Ta)

Rds On (Max) @ Id, Vgs :

2Ohm @ 50mA, 5V

Supplier Device Package :

SOT-323

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

1V @ 250µA