Диаши

BSP320SH6433XTMA1

Current - Continuous Drain (Id) @ 25°C :

2.9A (Tj)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

9.3 nC @ 7 V

Input Capacitance (Ciss) (Max) @ Vds :

340 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-261-4, TO-261AA

Part Status :

Active

Power Dissipation (Max) :

1.8W (Ta)

Rds On (Max) @ Id, Vgs :

120mOhm @ 2.9A, 10V

Supplier Device Package :

SOT-223

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 20µA