Диаши

BSC883N03LSGATMA1

Current - Continuous Drain (Id) @ 25°C :

17A (Ta), 98A (Tc)

Drain to Source Voltage (Vdss) :

34 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

34 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

2800 pF @ 15 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-PowerTDFN

Part Status :

Not For New Designs

Power Dissipation (Max) :

2.5W (Ta), 57W (Tc)

Rds On (Max) @ Id, Vgs :

3.8mOhm @ 30A, 10V

Supplier Device Package :

PG-TDSON-8-1

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.2V @ 250µA