Диаши

FBG10N05AC

Current - Continuous Drain (Id) @ 25°C :

5A (Tc)

Drain to Source Voltage (Vdss) :

100 V

Drive Voltage (Max Rds On, Min Rds On) :

5V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

2.2 nC @ 5 V

Input Capacitance (Ciss) (Max) @ Vds :

233 pF @ 50 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

4-SMD, No Lead

Part Status :

Active

Power Dissipation (Max) :

-

Rds On (Max) @ Id, Vgs :

44mOhm @ 5A, 5V

Supplier Device Package :

4-SMD

Technology :

GaNFET (Gallium Nitride)

Vgs (Max) :

+6V, -4V

Vgs(th) (Max) @ Id :

2.5V @ 1.2mA