Диаши

STD60NF3LLT4

Current - Continuous Drain (Id) @ 25°C :

60A (Tc)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

40 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

2210 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Part Status :

Obsolete

Power Dissipation (Max) :

100W (Tc)

Rds On (Max) @ Id, Vgs :

9.5mOhm @ 30A, 10V

Supplier Device Package :

DPAK

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±16V

Vgs(th) (Max) @ Id :

1V @ 250µA