Обзор продукта
Документы и СМИ
- Диаши
- FQA24N50F
информация о продукте
- Current - Continuous Drain (Id) @ 25°C :
- 24A (Tc)
- Drain to Source Voltage (Vdss) :
- 500 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 120 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4500 pF @ 25 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-3P-3, SC-65-3
- Part Status :
- Obsolete
- Power Dissipation (Max) :
- 290W (Tc)
- Rds On (Max) @ Id, Vgs :
- 200mOhm @ 12A, 10V
- Supplier Device Package :
- TO-3P
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 5V @ 250µA
ОПИСАНИЕ продукта
MOSFET N-CH 500V 24A TO3P
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