Диаши

SI8415DB-T1-E1

Current - Continuous Drain (Id) @ 25°C :

5.3A (Ta)

Drain to Source Voltage (Vdss) :

12 V

Drive Voltage (Max Rds On, Min Rds On) :

1.8V, 4.5V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

30 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

4-XFBGA, CSPBGA

Part Status :

Obsolete

Power Dissipation (Max) :

1.47W (Ta)

Rds On (Max) @ Id, Vgs :

37mOhm @ 1A, 4.5V

Supplier Device Package :

4-Microfoot

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

1V @ 250µA