Диаши

SI4401DY-T1-GE3

Current - Continuous Drain (Id) @ 25°C :

8.7A (Ta)

Drain to Source Voltage (Vdss) :

40 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

50 nC @ 5 V

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Part Status :

Obsolete

Power Dissipation (Max) :

1.5W (Ta)

Rds On (Max) @ Id, Vgs :

15.5mOhm @ 10.5A, 10V

Supplier Device Package :

8-SOIC

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

1V @ 250µA (Min)