Диаши

FDD86081-F085

Current - Continuous Drain (Id) @ 25°C :

6.7A (Ta), 21.4A (Tc)

Drain to Source Voltage (Vdss) :

100 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

6.8 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

493 pF @ 50 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Part Status :

Obsolete

Power Dissipation (Max) :

3W (Ta), 31.3W (Tc)

Rds On (Max) @ Id, Vgs :

31.5mOhm @ 6A, 10V

Supplier Device Package :

D-PAK (TO-252)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4.5V @ 36µA