Диаши

XR46000ESE

Current - Continuous Drain (Id) @ 25°C :

1.5A (Tc)

Drain to Source Voltage (Vdss) :

600 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

7.5 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

170 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-261-4, TO-261AA

Part Status :

Obsolete

Power Dissipation (Max) :

20W (Tc)

Rds On (Max) @ Id, Vgs :

8Ohm @ 750mA, 10V

Supplier Device Package :

SOT-223-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4V @ 250µA