Диаши

FDT1600N10ALZ

Current - Continuous Drain (Id) @ 25°C :

5.6A (Tc)

Drain to Source Voltage (Vdss) :

100 V

Drive Voltage (Max Rds On, Min Rds On) :

5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

3.77 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

225 pF @ 50 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-261-4, TO-261AA

Part Status :

Active

Power Dissipation (Max) :

10.42W (Tc)

Rds On (Max) @ Id, Vgs :

160mOhm @ 2.8A, 10V

Supplier Device Package :

SOT-223-4

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.8V @ 250µA