Диаши

PMPB12EPX

Current - Continuous Drain (Id) @ 25°C :

7.9A (Ta)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

39.9 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

227 pF @ 15 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

6-UDFN Exposed Pad

Part Status :

Obsolete

Power Dissipation (Max) :

1.7W (Ta), 13W (Tc)

Rds On (Max) @ Id, Vgs :

17.3mOhm @ 7.9A, 10V

Supplier Device Package :

DFN2020MD-6

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2V @ 250µA