Диаши

MMBFJ175LT3G

Current - Drain (Idss) @ Vds (Vgs=0) :

7 mA @ 15 V

Current Drain (Id) - Max :

-

Drain to Source Voltage (Vdss) :

-

FET Type :

P-Channel

Input Capacitance (Ciss) (Max) @ Vds :

11pF @ 10V (VGS)

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Part Status :

Active

Power - Max :

225 mW

Resistance - RDS(On) :

125 Ohms

Supplier Device Package :

SOT-23-3 (TO-236)

Voltage - Breakdown (V(BR)GSS) :

30 V

Voltage - Cutoff (VGS off) @ Id :

3 V @ 10 nA