Диаши

2N5116UB/TR

Current - Drain (Idss) @ Vds (Vgs=0) :

25 mA @ 15 V

Current Drain (Id) - Max :

-

Drain to Source Voltage (Vdss) :

30 V

FET Type :

P-Channel

Input Capacitance (Ciss) (Max) @ Vds :

27pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

-65°C ~ 200°C (TJ)

Package / Case :

3-SMD, No Lead

Part Status :

Active

Power - Max :

500 mW

Resistance - RDS(On) :

175 Ohms

Supplier Device Package :

UB

Voltage - Breakdown (V(BR)GSS) :

30 V

Voltage - Cutoff (VGS off) @ Id :

4 V @ 1 nA